The dielectric performances as well as the effects of Dy³⁺ ions content at A sites of YMn₂O₅ (YMO) [x ​= ​0 (YDM₀) and x ​= ​0.4 (YDM_0.4)] polycrystalline samples were explored. These compounds were synthesized via sol–gel method. X-Ray diffraction and Raman measurements proved the high quality of the compounds that crystallized in an orthorhombic structure with the Pbam space group. Besides, impedance spectroscopy and electrical modulus studies revealed that both samples exhibited a non-Debye's type of relaxation. The decrease of impedance for YDM_0.4 compared to the pure YDM₀, may be attributed to the decrease in charge transfer resistance. Concerning the fit of impedance spectra, they confirmed that both compounds were simultaneously capacitive and resistive. Furthermore, the activation energies obtained from Modulus and complex impedance were proven to be neighboring, suggesting that the relaxation process refers to electron hopping. For each compound, the evolution of ε' and tan ​δ with temperature indicated a clearer relaxor behavior, namely the existence of two relaxations. The first one detected at low temperature is related to the charge carriers hopping between Mn³⁺ and Mn⁴⁺ and the second at high temperature is associated with oxygen vacancies. The reduced hopping rate with Dy³⁺ substitution for Y³⁺ ions at A sites is responsible for the decrease in dielectric constant and dielectric loss. These significant findings demonstrate that these materials can be invested in a fruitful use in UV photo-detector and power applications in high frequency as microwave, millimeter wave signal processing, for civilian, military and space applications.

探讨了介电性能以及YMn ₂ O ₅ (YMO) [ x = 0 (YDM ₀ )和x = 0.4 (YDM _0.4 )] 多晶样品A 位Dy ³⁺离子含量的影响. 这些化合物是通过溶胶-凝胶法合成的。X 射线衍射和拉曼测量证明了在具有 Pbam 空间群的正交结构中结晶的化合物的高质量。此外，阻抗谱和电模量研究表明，这两个样品都表现出非德拜类型的弛豫。与纯YDM ₀相比，YDM _0.4的阻抗降低 ，可能是由于电荷转移电阻的降低。关于阻抗谱的拟合，他们证实两种化合物同时具有电容性和电阻性。此外，从模量和复阻抗获得的激活能被证明是相邻的，这表明弛豫过程是指电子跳跃。对于每种化合物，ε '和tanδ随温度的演变表明了更清晰的弛豫行为，即存在两种弛豫。在低温下检测到的第一个与 Mn ³⁺和 Mn ⁴⁺之间的电荷载流子跳跃有关，而在高温下检测到的第二个与氧空位有关。Dy ³⁺降低跳跃率在 A 位取代 Y ³⁺离子是造成介电常数和介电损耗降低的原因。这些重要发现表明，这些材料可以有效地用于紫外线光电探测器和高频功率应用，如微波、毫米波信号处理，用于民用、军事和太空应用。