We report the structural and thermoelectric properties of the Cu₂Se compound with a systematic substitution of Se by Te atom. The bulk polycrystalline Cu₂Se_1-xTe_x samples for the Te concentrations of x = 0.00, 0.02, 0.04, 0.06, and 0.08 were prepared by the solid-state reaction method. The room-temperature XRD studies revealed that the studied samples possess a monoclinic crystal structure. The oxidation state and electronic structure are confirmed by employing X-ray photoemission spectroscopy (XPS). The hardness of the samples increased systematically with an increase in Te doping concentration. The electrical resistivity of the doped samples was found to be increased in comparison to the pure sample. The Seebeck coefficient was positive throughout the temperature range under investigation, indicating that holes are the majority charge carriers in the studied compounds. The thermal conductivity of the doped samples decreased, which is presumably attributed to the point defect scattering. The systematic evolution of thermoelectric properties via substitution of Se by Te over the range (0.00 ≤ x ≤ 0.08) concludes that the overall thermoelectric power factor (PF) and figure of merit (ZT) decrease with Te substitution compared to the pristine Cu₂Se compound.

我们报告了 Cu ₂ Se 化合物的结构和热电特性，其中Se 被 Te 原子系统取代。批量多晶的Cu ₂硒_{1- X}碲_X样品的碲浓度X = 0.00、0.02、0.04、0.06 和 0.08 是通过固态反应方法制备的。室温 XRD 研究表明，所研究的样品具有单斜晶体结构。通过使用 X 射线光电子能谱 (XPS) 确认氧化态和电子结构。样品的硬度随着 Te 掺杂浓度的增加而系统地增加。发现掺杂样品的电阻率比纯样品增加。在所研究的整个温度范围内，塞贝克系数为正，表明空穴是所研究化合物中的主要电荷载流子。掺杂样品的热导率降低，这可能归因于点缺陷散射。 x  ≤ 0.08) 得出结论，与原始 Cu ₂ Se 化合物相比，整体热电功率因数 ( PF ) 和品质因数 ( ZT ) 随 Te 取代而降低。