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Study of deuterium permeation, retention, and desorption in SiC coatings submitted to relevant conditions for breeder blanket applications: thermal cycling effect under electron irradiation and oxygen exposure
Journal of Nuclear Materials ( IF 2.8 ) Pub Date : 2021-07-30 , DOI: 10.1016/j.jnucmat.2021.153219
T. Hernández 1 , A. Moroño 1 , F.J. Sánchez 1 , C. Maffiotte 2 , M.A. Monclús 3, 4 , R. González-Arrabal 4
Affiliation  

In this paper we report on the performance as deuterium permeation barriers of sputtered amorphous, dense and not fully stoichiometric SiC coatings under relevant conditions for breeder blanket applications in fusion reactors. To do that, we investigate the following effects on permeation values: (i) thermal cycling at 450 °C, (ii) combined thermal cycling and e irradiation (1.8 MeV up to a total dose of 1 MGy), as well as (iii) oxygen exposure at a temperature of 450 °C during e irradiation. Data show that the permeation reduction factor (PRF) for the as-deposited SiC coated is ∼10 4, even at the predicted operation temperature for the breeder and it is slightly reduced either by thermal cycling without and during e irradiation. However, the exposure to oxygen at 450 °C during e irradiation leads to degradation of the coating and of its PRF of about three orders of magnitude. The origin of the coating degradation is discussed.

We also study the D retention and desorption in SiC coatings that were implanted with D at energy of 7.5 keV prior to (as-deposited) and after being submitted to the treatments previously described. Secondary ion mass spectroscopy data show that thermal cycling, without and during e irradiation, strongly increases the D retention in the coatings and leads to the appearance of D2 desorption peak at temperatures between ∼400-750 °C, whereas e-irradiation during thermal cycling does not significantly change the D retention but shifts to higher temperatures thisD2 desorption peak



中文翻译:

针对增殖毯应用相关条件提交的 SiC 涂层中氘渗透、保留和解吸的研究:电子辐照和氧气暴露下的热循环效应

在本文中,我们报告了在聚变反应堆中增殖毯应用的相关条件下,溅射非晶、致密和不完全化学计量的 SiC 涂层作为氘渗透屏障的性能。为此,我们研究了以下对渗透值的影响:(i)450°C 下的热循环,(ii)热循环和 e -辐射(1.8 MeV 至 1 MGy 总剂量)的组合,以及( iii) 在 e -辐照期间,在 450 °C 的温度下暴露于氧气。数据显示,沉积态 SiC 涂层的渗透降低因子 (PRF) 为 ~10 4,即使在增殖剂的预测操作温度下,并且在没有 e -和在 e -期间通过热循环略微降低辐照。然而,在 e -辐照期间暴露于 450 °C 的氧气会导致涂层及其 PRF 降解约三个数量级。讨论了涂层降解的起源。

我们还研究了在 SiC 涂层中的 D 保留和解吸,这些涂层在接受上述处理之前(沉积时)和之后以 7.5 keV 的能量注入了 D。二次离子质谱数据表明,热循环,而不会和e期间-照射,强烈地增加在涂层和引线到d的外观d保持2期间脱附峰在~400-750℃之间的温度,而电子照射热循环不会显着改变 D 保留,但会转移到更高的温度,此 D 2解吸峰

更新日期:2021-09-03
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