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3-D Prismatic Packaging Methodologies for Wide Band Gap Power Electronics Modules
IEEE Transactions on Power Electronics ( IF 6.6 ) Pub Date : 2021-05-18 , DOI: 10.1109/tpel.2021.3081679
Haotao Ke , Utkarsh Mehrotra , Douglas C. Hopkins

In a power module the parasitic inductance limits the dynamic high-frequency performance, and the area of the cooling surfaces limits the power capability. This article presents a new 3-D power electronic design methodology based on the concept of mutual inductance cancellation and multisided heat transfer. New 3-D prismatic packaging concepts are proposed for wide band gap power devices, where the devices can be mounted at acute angles to adjacent interconnects or other devices. Discussion is given on electrical and thermal path optimization in a 3-D space. To validate the 3-D prismatic packaging methodology, a 1200 V/50 A SiC half-bridge power module is fabricated and tested for electrical and thermal performance and results are compared with simulations. The power density calculated for the module is 12 kW/in3 (including heatsink) and shows a 31.3% inductance reduction compared to a 2-D planar module. Finally, design guidance suggested for utilizing prismatic structures is provided, together with suggested future work in the area. This article presents the first reported true 3-D power module.

中文翻译:


适用于宽带隙电力电子模块的 3D 棱柱形封装方法



在电源模块中,寄生电感限制了动态高频性能,而冷却表面的面积则限制了功率能力。本文提出了一种基于互感消除和多边传热概念的新 3D 电力电子设计方法。为宽带隙功率器件提出了新的 3D 棱柱形封装概念,其中器件可以与相邻互连或其他器件成锐角安装。讨论了 3D 空间中的电气和热路径优化。为了验证 3D 棱柱形封装方法,制造了 1200 V/50 A SiC 半桥功率模块并测试了电气和热性能,并将结果与​​仿真进行了比较。该模块的计算功率密度为 12 kW/in3(包括散热器),与 2-D 平面模块相比,电感减少了 31.3%。最后,提供了使用棱柱结构的设计指南,以及该领域未来工作的建议。本文介绍了第一个报道的真正的 3D 电源模块。
更新日期:2021-05-18
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