A novel high performance SiC asymmetric cell trench MOSFET with split gate (SG) and integrated junction barrier schottky (JBS) diode (SGS-ATMOS) is proposed for the first time. The shielding effect provided by the SG structure not only reduces the gate-drain capacitance ( Cgd{C}_{\mathrm{gd}} ) but also alleviates the electric field crowding in the dielectric layer at trench corner. The integrated trench JBS diode bypasses the PiN body diode while obtaining good double protection from the SG and p-type shielding region. Therefore, not only the MOSFET but also diode performance is significantly improved for the proposed structure. Numerical analysis results show that compared with the conventional asymmetric cell trench MOSFET (Con-ATMOS), the high frequency figure of merit (HFFOM1, Ron⋅Cgd{R}_{\mathrm{on}} {\cdot } {C}_{\mathrm{gd}} ) is reduced by 92.5% and the Baliga figure of merit (BFOM, BV2/Ron,sp{BV}^{2}/R_{\mathrm{on,sp}} ) is increased by 57.2%, respectively. In addition, the forward conduction voltage drop ( VF{V}_{\mathrm{F}} ), reverse recovery charge ( Qrr{Q}_{\mathrm{rr}} ) and peak reverse recovery current ( Irrm{I}_{\mathrm{rrm}} ) of the diode are reduced from 3.10V, 1.95μC1.95\mu \text{C} /cm2 and 68.0A for the Con-ATMOS to 1.56V, 0.97μC0.97\mu \text{C} /cm2 and 35.9A for the proposed SGS-ATMOS, respectively. Compared with the Con-ATMOS, the turn-on loss ( Eon{E}_{\mathrm{on}} ) and turn-off loss ( Eoff{E}_{\mathrm{off}} ) of the proposed device are reduced by 33.3% and 33.0%, respectively. The Eon{E}_{\mathrm{on}} and Eoff{E}_{\mathrm{off}} of the proposed device are also 33.6% and 30.0% off compared with the Con-ATMOS with external JBS diode, respectively. The temperature characteristics of the SGS-ATMOS are also discussed and it is found that the proposed device exhibits good performance at high temperature.

中文翻译：

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具有分裂栅极和集成 JBS 二极管的新型 SiC 非对称单元沟槽 MOSFET


首次提出了一种具有分裂栅极（SG）和集成结势垒肖特基（JBS）二极管的新型高性能SiC非对称单元沟槽MOSFET（SGS-ATMOS）。 SG结构提供的屏蔽效应不仅减小了栅漏电容(Cgd{C}_{\mathrm{gd}})，而且减轻了沟槽拐角处介质层中的电场拥挤。集成沟槽 JBS 二极管绕过 PiN 体二极管，同时获得 SG 和 p 型屏蔽区的良好双重保护。因此，所提出的结构不仅显着提高了 MOSFET，而且还显着提高了二极管的性能。数值分析结果表明，与传统的非对称单元沟槽MOSFET（Con-ATMOS）相比，高频品质因数（HFFOM1, Ron⋅Cgd{R}_{\mathrm{on}} {\cdot } {C}_ {\mathrm{gd}} ) 减少了 92.5%，Baliga 品质因数 (BFOM, BV2/Ron,sp{BV}^{2}/R_{\mathrm{on,sp}} ) 增加了 57.2 ％， 分别。此外，正向导通压降 ( VF{V}_{\mathrm{F}} )、反向恢复电荷 ( Qrr{Q}_{\mathrm{rr}} ) 和峰值反向恢复电流 ( Irrm{I} _{\mathrm{rrm}} ) 的二极管从 Con-ATMOS 的 3.10V、1.95μC1.95\mu \text{C} /cm2 和 68.0A 降低至 1.56V、0.97μC0.97\mu \所提议的 SGS-ATMOS 分别为 text{C} /cm2 和 35.9A。与Con-ATMOS相比，所提出的器件的开启损耗（Eon{E}_{\mathrm{on}}）和关断损耗（Eoff{E}_{\mathrm{off}}）为分别减少33.3%和33.0%。与带有外部 JBS 二极管的 Con-ATMOS 相比，该器件的 Eon{E}_{\mathrm{on}} 和 Eoff{E}_{\mathrm{off}} 也分别降低了 33.6% 和 30.0% 。 还讨论了 SGS-ATMOS 的温度特性，发现所提出的器件在高温下表现出良好的性能。