A modified NMOS inverter employing output feedback theme has been proposed in this paper. The feedback structure can guarantee high voltage output at a wider range of low voltage input. The proposed inverter and the conventional pseudo-CMOS inverter are both fabricated by top gate coplanar In-Zn-O thin film transistors (IZO TFTs) for comparing. The experimental results show that the proposed inverter possesses better static performance exhibiting noise margin NML/NMH, output swing VOL-VOH, switching threshold VM of 3.95/5.82 V, 0.05-9.97 V, 4.05 V, respectively. In addition, the proposed inverter is also applied in the gate driver integrated by IZO TFTs to further verify its function. Benefited from good static characteristic of the proposed inverter, the output module is well controlled to produce a good output waveform. It is measured that the output waveform of the 120th-stage has almost no distortion compared with that of the 1st-stage at 25 kHz.

中文翻译：

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一种改进的轨到轨输出摆幅NMOS逆变器及其在金属氧化物TFT集成栅极驱动器中的应用


本文提出了一种采用输出反馈主题的改进型 NMOS 逆变器。反馈结构可以在更宽的低压输入范围内保证高压输出。为了进行比较，所提出的反相器和传统的伪 CMOS 反相器均由顶栅共面 In-Zn-O 薄膜晶体管（IZO TFT）制成。实验结果表明，所提出的逆变器具有更好的静态性能，噪声容限NML/NMH、输出摆幅VOL-VOH、开关阈值VM分别为3.95/5.82 V、0.05-9.97 V、4.05 V。此外，所提出的反相器也应用于IZO TFT集成的栅极驱动器中，以进一步验证其功能。得益于所提出的逆变器良好的静态特性，输出模块得到良好的控制，以产生良好的输出波形。经测量，25kHz时第120级的输出波形与第1级相比几乎没有失真。