We have characterized the carrier dynamics of the excitonic emission emerging from a monolayer of graphene grown on a Cu(111) surface. Excitonic emission from the graphene, with strong and sharp peaks both with a full-width at half-maximum of 2.7 meV, was observed near ~3.16 and ~3.18 eV at 4.2 K. The carrier recombination parameters were studied by measuring both temperature-dependent and time-resolved photoluminescence. The intensity variation with temperature of these two peaks shows an opposing trend. The time-resolved emission was modelled using coupled differential equations and the decay time was found to be dominated by carrier trapping and Auger recombination as the temperature increased.

我们已经表征了从生长在 Cu(111) 表面上的单层石墨烯中产生的激子发射的载流子动力学。来自石墨烯的激子发射，在 4.2 K 时观察到约 3.16 eV 和约 3.18 eV，具有强而尖的峰，峰全宽均为 2.7 meV。和时间分辨光致发光。这两个峰的强度随温度的变化显示出相反的趋势。使用耦合微分方程对时间分辨发射进行建模，并且发现随着温度升高，衰减时间由载流子俘获和俄歇复合主导。