Propagation of threading screw dislocations (TSDs) during hybrid growth, combined with TSD conversion by solution growth and bulk growth by physical vapor transport, has been investigated for 4 off and 15 off C-face seeds. The converted defects on basal planes (BP-defects) are able to be eliminated by continuing to guide them on basal planes with a 15 off seed, while BP-defects revert to TSDs with a 4 off seed. The difference in the BP-defects propagation is discussed based on the elastic energy balance between TSDs and BP-defects in the unit growth thickness for higher off-angle seeds.

中文翻译：

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通过混合方法生长的 4H-SiC 晶体中的螺纹螺旋位错大量减少，结合溶液生长和物理蒸汽传输生长在更高的斜角衬底上

已经针对 4 个和 15 个C 面种子研究了混合生长过程中螺纹螺位错 (TSD) 的传播，结合溶液生长的 TSD 转化和物理蒸汽传输的体积生长。基底平面上的转换缺陷（BP 缺陷）可以通过继续在基底平面上引导它们以 15 个种子脱落来消除，而 BP 缺陷在种子脱落为 4 时恢复为 TSD。BP 缺陷传播的差异是基于 TSD 和 BP 缺陷之间的弹性能量平衡在较高斜角种子的单位生长厚度上进行讨论的。