In this study, we investigated the relationship of light output power with the optical thickness of the p-layers in AlGaN-based deep ultraviolet light-emitting diodes with a transparent high-Al-composition p-AlGaN clad layer, a thin p-GaN contact layer, and a reflective p-type electrode. By adjusting the thickness of the transparent high-Al-composition p-AlGaN clad layer, we observed a marked change in light output power. A maximum light output power of 385mW at 1500mA, a maximum external quantum efficiency of 15.7% at 10mA, and a maximum wall-plug efficiency of 15.3% at 10mA were obtained at an emission wavelength of 275nm.

中文翻译：

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通过优化 p 层的光学厚度提高基于 AlGaN 的深紫外发光二极管的光输出功率

在这项研究中，我们研究了光输出功率与基于 AlGaN 的深紫外发光二极管中 p 层光学厚度的关系，该二极管具有透明的高铝成分 p-AlGaN 包覆层、薄 p-GaN接触层和反射 p 型电极。通过调整透明的高铝成分 p-AlGaN 包覆层的厚度，我们观察到光输出功率的显着变化。在275nm的发射波长下，1500mA下的最大光输出功率为385mW，10mA下的最大外量子效率为15.7%，10mA下的最大壁插效率为15.3%。