Here we investigate the thermodynamic and electronic properties of ${\mathrm{Eu}}_{11}\mathrm{In}{\mathrm{Sb}}_9$ single crystals. Electrical transport data show that ${\mathrm{Eu}}_{11}\mathrm{In}{\mathrm{Sb}}_9$ has a semiconducting ground state with a relatively narrow band gap of 320 meV. Magnetic susceptibility data reveal antiferromagnetic order at low temperatures, whereas ferromagnetic interactions dominate at high temperature. Specific heat, magnetic susceptibility, and electrical resistivity measurements reveal three phase transitions at $T_{N1}=9.3$ K, $T_{N2}=8.3$ K, and $T_{N3}=4.3$ K. Unlike ${\mathrm{Eu}}_5{\mathrm{In}}_2{\mathrm{Sb}}_6$, a related europium-containing Zintl compound, no colossal magnetoresistance (CMR) is observed in ${\mathrm{Eu}}_{11}\mathrm{In}{\mathrm{Sb}}_9$. We attribute the absence of CMR to the smaller carrier density and the larger distance between Eu ions and In-Sb polyhedra in ${\mathrm{Eu}}_{11}\mathrm{In}{\mathrm{Sb}}_9$. Our results indicate that ${\mathrm{Eu}}_{11}\mathrm{In}{\mathrm{Sb}}_9$ has potential applications as a thermoelectric material through doping or as a long-wavelength detector due to its narrow gap.

中文翻译：

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反铁磁Eu11InSb9中的窄带隙半导体行为

在这里，我们研究了热力学和电子特性 ${\mathrm{欧盟}}_{11}在{锑}_9$单晶。电力运输数据显示，${\mathrm{欧盟}}_{11}在{锑}_9$具有半导体基态，带隙相对较窄，为 320 meV。磁化率数据揭示了低温下的反铁磁有序，而铁磁相互作用在高温下占主导地位。比热、磁化率和电阻率测量结果显示在${吨}_{N1}=9.3$ 克， ${吨}_{N2}=8.3$ K，和 ${吨}_{N3}=4.3$ K. 不像 ${\mathrm{欧盟}}_5{在}_2{锑}_6$，一种相关的含铕 Zintl 化合物，未观察到巨磁阻 (CMR) ${\mathrm{欧盟}}_{11}在{锑}_9$. 我们将 CMR 的缺失归因于较小的载流子密度和 Eu 离子与 In-Sb 多面体之间的较大距离${\mathrm{欧盟}}_{11}在{锑}_9$. 我们的结果表明${\mathrm{欧盟}}_{11}在{锑}_9$ 由于其窄间隙，它具有通过掺杂作为热电材料或作为长波长检测器的潜在应用。