Robust plasmonic properties of epitaxial TiN films on highly lattice-mismatched complex oxides,Physical Review Materials

当前位置： X-MOL 学术 › Phys. Rev. Materials › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Robust plasmonic properties of epitaxial TiN films on highly lattice-mismatched complex oxides
Physical Review Materials ( IF 3.1 ) Pub Date : 2021-07-29 , DOI: 10.1103/physrevmaterials.5.075201
Jiachang Bi _{1,

2,

3} , Ruyi Zhang _{1,

2} , Shaoqin Peng ₁ , Jie Sun ₁ , Xinming Wang ₁ , Wei Chen _{1,

2} , Liang Wu ₄ , Junhua Gao ₁ , Hongtao Cao ₁ , Yanwei Cao _{1,

2}

Affiliation

High-quality titanium nitride (TiN) film is a prominent plasmonic material in the fields of plasmonics and nanophotonics, which is usually synthesized on several limited substrates (such as MgO, silicon, and sapphire). With the rapid development of hybrid optoelectronic devices composed of plasmonic materials and functional oxides, it is promising to integrate high-quality TiN films with a variety of functional oxides, which requires to accommodate TiN films to a broad spectrum of lattice mismatch. In this work, we synthesized high-quality single-crystalline TiN films on various oxide substrates

[MgO, {MgAl}_{2} O_{4},

({LaAlO}_{3})_{0.30} − ({SrAl}_{1 / 2} {Ta}_{1 / 2} O_{3})_{0.70}, and {YAlO}_{3}]

by high-pressure magnetron sputtering. It is surprising that the epitaxial TiN films can accommodate extremely large lattice mismatch up to

- 15.39 %

. The crystal and electronic structures of the TiN films were characterized by high-resolution x-ray diffraction, atomic force microscopy, and x-ray photoemission spectroscopy measurements. The optical and electrical properties of the TiN films on various oxide substrates were investigated by spectroscopic ellipsometry and Hall effect measurements. It is revealed that the remarkable optical properties of TiN films are robust even on highly lattice-mismatched oxide substrates. Our work paves a way to integrate plasmonic TiN films with a variety of functional oxides for high-performance hybrid optoelectronic devices.

中文翻译：

高度晶格失配复合氧化物上外延 TiN 薄膜的稳健等离子体特性

高质量氮化钛 (TiN) 薄膜是等离子体和纳米光子学领域的重要等离子体材料，通常在几种有限的衬底（如 MgO、硅和蓝宝石）上合成。随着由等离子体材料和功能氧化物组成的混合光电器件的快速发展，将高质量的 TiN 薄膜与各种功能氧化物集成在一起很有希望，这需要使 TiN 薄膜适应广泛的晶格失配。在这项工作中，我们在各种氧化物衬底上合成了高质量的单晶 TiN 薄膜

[氧化镁, {镁铝}_{2} 哦_{4},

({氧化铝}_{3})_{0.30} - (铝_{1 / 2} 塔_{1 / 2} 哦_{3})_{0.70}, 和 {亚罗}_{3}]

通过高压磁控溅射。令人惊讶的是，外延 TiN 薄膜可以适应高达

- 15.39 %

. TiN 薄膜的晶体和电子结构通过高分辨率 x 射线衍射、原子力显微镜和 x 射线光电发射光谱测量进行表征。通过光谱椭偏仪和霍尔效应测量研究了各种氧化物衬底上的 TiN 薄膜的光学和电学性能。结果表明，即使在高度晶格失配的氧化物衬底上，TiN 薄膜的显着光学性能也是稳健的。我们的工作为将等离子体 TiN 薄膜与各种功能性氧化物集成到高性能混合光电器件铺平了道路。

更新日期：2021-07-29

点击分享查看原文

点击收藏

阅读更多本刊最新论文