Isotropic and Anisotropic g-Factor Corrections in GaAs Quantum Dots,Physical Review Letters

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Isotropic and Anisotropic g-Factor Corrections in GaAs Quantum Dots
Physical Review Letters ( IF 8.1 ) Pub Date : 2021-07-29 , DOI: 10.1103/physrevlett.127.057701
Leon C Camenzind ₁ , Simon Svab ₁ , Peter Stano _{2,

3} , Liuqi Yu ₁ , Jeramy D Zimmerman ₄ , Arthur C Gossard ₄ , Daniel Loss _{1,

2} , Dominik M Zumbühl ₁

Affiliation

We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates into the individual spin states of an empty quantum dot for an in-plane magnetic field with various strengths and directions. We quantify the Zeeman energy and find a linear dependence on the magnetic field strength that allows us to extract the g-factor. The measured g-factor is understood in terms of spin-orbit interaction induced isotropic and anisotropic corrections to the GaAs bulk g-factor. Experimental detection and identification of minute band-structure effects in the g-factor is of significance for spin qubits in GaAs quantum dots.

中文翻译：

GaAs 量子点中的各向同性和各向异性 g 因子校正

我们通过实验确定横向 GaAs 单电子量子点中的各向同性和各向异性 g 因子校正。我们通过测量隧道速率进入具有各种强度和方向的面内磁场的空量子点的各个自旋态来提取塞曼分裂。我们量化塞曼能量并找到对磁场强度的线性依赖性，这使我们能够提取 g 因子。测量的 g 因子是根据自旋轨道相互作用引起的对 GaAs 体 g 因子的各向同性和各向异性校正来理解的。g 因子中微小能带结构效应的实验检测和识别对于 GaAs 量子点中的自旋量子位具有重要意义。

更新日期：2021-07-29

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