In this paper, Na-doped ZnO thin films were grown by MOCVD using cyclopentadienylsodium (CpNa) as the sodium source. The effects of substrate temperature and sodium source temperature on the properties of Na-doped ZnO thin films were studied. SIMS measurement verified that higher substrate temperature would result in higher Na doping content in ZnO:Na thin films. SEM and Hall measurements revealed that both surface morphology and electrical properties of ZnO:Na thin films showed nonlinear variation with substrate temperature and sodium source temperature. When the substrate temperature or the sodium source temperature was increased, the surface morphology of ZnO:Na thin films turned to sheet structures tilted in all directions first and then back to perpendicular hexagonal structure dominant morphology, and the hole concentration increased first and then decreased. This nonlinear variation trend was ascribed to be related to the variation of doping content and impurity position in ZnO:Na thin films, especially the Na impurity position.

中文翻译：

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衬底温度和钠源温度对 MOCVD 法掺杂 ZnO 的影响

在本文中，以环戊二烯基钠 (CpNa) 为钠源，采用 MOCVD 方法生长了 Na 掺杂的 ZnO 薄膜。研究了衬底温度和钠源温度对Na掺杂ZnO薄膜性能的影响。SIMS 测量证实较高的衬底温度会导致 ZnO:Na 薄膜中较高的 Na 掺杂含量。SEM 和霍尔测量结果表明，ZnO:Na 薄膜的表面形貌和电性能均随衬底温度和钠源温度呈现非线性变化。当衬底温度或钠源温度升高时, ZnO:Na 薄膜的表面形貌首先转变为向各个方向倾斜的片状结构, 然后又回到垂直六边形结构的主导形貌, 空穴浓度先升高后降低。这种非线性变化趋势归因于ZnO:Na薄膜中掺杂含量和杂质位置的变化，尤其是Na杂质位置的变化。