Various cases of electrochemical deposition of indium into oxidized and unoxidized mesoporous silicon were investigated and subsequently compared. The results would suggest that both thermal and chemical oxidation of porous silicon cause the metal particles being deposited into its pores to shift deeper along the pore channels due to the latter's topmost areas being oxidized the most and therefore becoming significantly less conductive and more easily wettable by both the deposition solution and indium itself upon its subsequent thermal processing. However, oxidation becomes less effective as the thickness of the porous layer is increased due to the gradually escalating effect of reduced conductivity at the pore tips. Potentially, porous silicon layers with indium particles localized in the bottommost parts of the pore channels could be used to form germanium nanostructures inside the pores, allowing subsequent creation of Ge-Si alloys by utilizing the electrochemical liquid-liquid-solid approach.

研究并随后比较了将铟电化学沉积到氧化和未氧化的介孔硅中的各种情况。结果表明，多孔硅的热氧化和化学氧化都会导致沉积在其孔中的金属颗粒沿着孔通道更深地移动，因为后者的最顶部区域被氧化得最多，因此导电性显着降低，更容易被沉积溶液和铟本身在其随后的热处理过程中。然而，随着多孔层厚度的增加，由于孔尖处电导率降低的影响逐渐增加，氧化变得不那么有效。潜在地，