We present a hexagonal boron nitride (hBN) polymer-assisted transfer technique and discuss subtleties about the process. We then demonstrate localized emission from strained regions of the film draped over features on a prepatterned substrate. Notably, we provide insight into the brightness distribution of these emitters and show that the brightest emission is clearly localized to the underlyin­g substrate features rather than unintentional wrinkles present in the hBN film. Our results aide in the current discussion surrounding scalability of single photon emitter arrays.

中文翻译：

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六方氮化硼中应变激活发射的聚合物转移技术

我们提出了一种六方氮化硼 (hBN) 聚合物辅助转移技术，并讨论了该过程的微妙之处。然后，我们展示了薄膜应变区域的局部发射，这些区域覆盖在预图案化基板上的特征上。值得注意的是，我们深入了解了这些发射器的亮度分布，并表明最亮的发射显然位于底层基板特征，而不是 hBN 膜中出现的无意皱纹。我们的结果有助于当前围绕单光子发射器阵列可扩展性的讨论。