We report the results of experimental studies and numerical simulation of the dynamics of the electron-hole pairs formation in silicon under the action of a two-period terahertz pulse with a maximum electric field strength of up to 23 MV/cm. It is shown that an inhomogeneous distribution of the charge carrier concentration over the depth of the silicon sample is formed, which persists for several microseconds. This inhomogeneity is formed due to a sharp increase in the rate of filling the conduction band with free carriers in the subsurface input layer of the silicon wafer, which occurs at a field strength above 15 MV/cm.

中文翻译：

---

硅中超短强太赫兹脉冲引起的自由载流子生成动力学

我们报告了在最大电场强度高达 23 MV/cm 的两周期太赫兹脉冲作用下硅中电子-空穴对形成动力学的实验研究和数值模拟结果。结果表明，在硅样品的深度上形成了电荷载流子浓度的不均匀分布，这种分布持续了几微秒。这种不均匀性是由于在硅晶片的次表面输入层中用自由载流子填充导带的速率急剧增加而形成的，这种情况发生在场强高于 15 MV/cm 时。