The facile fabrication of g-C₃N₄/SnO₂ S-scheme heterojunctions for photocatalytic removal of NO under visible light is reported. Optical and electrochemical investigations indicate the formation of these heterojunctions that enable bending at the interface of g-C₃N₄ and SnO₂ and give rise to an efficient separation. A high photocatalytic 500-ppb NO removal performance of 35% and low NO₂ generation of 2% are realized after 30 min of visible light irradiation upon the g-C₃N₄/SnO₂ heterojunction with 30% of g-C₃N₄ addition. In contrast, the bare g-C₃N₄ extensively produces NO₂ greater than 12% compared to 30% from the g-C₃N₄ sample. This study also shows that the g-C₃N₄/SnO₂ heterojunction is a stable catalyst system and superoxide radicals play a crucial role in the photocatalytic NO removal. Since the preparation of the g-C₃N₄/SnO₂ heterojunction reported in this work is straightforward, it can potentially enable the preparation of highly robust visible-light-driven photocatalysts to remove NO pollution.

报道了用于在可见光下光催化去除 NO的 gC ₃ N ₄ /SnO ₂ S 型异质结的简便制造。光学和电化学研究表明这些异质结的形成能够在 gC ₃ N ₄和 SnO ₂的界面处弯曲并产生有效的分离。在具有 30% gC ₃ N ₄的 gC ₃ N ₄ /SnO ₂异质结上，在可见光照射 30 分钟后实现了 35% 的高光催化 500-ppb NO 去除性能和₂ % 的低 NO ₂生成添加。相比之下，与来自gC ₃ N ₄样品的30%相比，裸gC ₃ N ₄广泛地产生大于12%的NO ₂。该研究还表明，gC ₃ N ₄ /SnO ₂异质结是一种稳定的催化剂体系，超氧自由基在光催化 NO 去除中起着至关重要的作用。由于在这项工作中报道的 gC ₃ N ₄ /SnO ₂异质结的制备很简单，它有可能使制备高度稳健的可见光驱动光催化剂以去除 NO 污染成为可能。