Giant magnetoresistance (GMR) sensors measure the external magnetic fields using a Wheatstone bridge configuration, with two active and two passive GMR elements. The differential output of the GMR-bridge is inherently non-linear and requires an additional interfacing front-end for linearization. In this paper, three different linearizing schemes are implemented, using a standard 180-nm CMOS technology, and a comparative study is presented. These schemes show a linear voltage-field relation in their characterizations. All these schemes require a single positive supply voltage of 3 V and provide a single-ended output. Efficacies of these schemes are brought out using simulation-based studies, considering the static and the time-varying input changes. The performance comparison of these schemes shows various trade-offs, such as component-count, power-consumption, maximum error, etc., with the existing GMR linearization circuits and provides the selection guidelines based on application requirements.

巨磁阻 (GMR) 传感器使用惠斯通电桥配置测量外部磁场，具有两个有源和两个无源 GMR 元件。GMR 桥的差分输出本质上是非线性的，需要额外的接口前端进行线性化。在本文中，使用标准 180-nm CMOS 技术实现了三种不同的线性化方案，并进行了比较研究。这些方案在其特性中显示出线性电压-场关系。所有这些方案都需要 3 V 的单个正电源电压并提供单端输出。考虑到静态和随时间变化的输入变化，这些方案的功效是通过基于模拟的研究得出的。这些方案的性能比较显示了各种权衡，例如组件数量、