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Influence of Solvent on Stability and Electrophysical Properties of Organic–Inorganic Perovskites Films CH3NH3PbI3
Theoretical and Experimental Chemistry ( IF 1 ) Pub Date : 2021-07-28 , DOI: 10.1007/s11237-021-09679-1
P. V. Torchyniuk 1 , O. I. V’yunov 1 , L. L. Kovalenko 1 , A. G. Belous 1 , A. A. Ishchenko 2 , I. V. Kurdyukova 2
Affiliation  

The influence of DMF and DMSO solvents on the properties of organic–inorganic perovskite films obtained at the ratio of starting reagents PbI2:CH3NH3I = 1:2 was studied. It was found that a dense film is formed from solutions in DMSO. XRD and fluorescence spectroscopy have shown that the use of DMSO promotes the formation of perovskite films that are less sensitive to moisture and irradiation. It is shown that the mobility of charge carriers in perovskite films obtained from DMSO (μ = 67 ± 5 cm2/V·s) is an order of magnitude higher than for the films obtained from DMF (μ = 9.1 ± 0.7 cm2/V·s). The density of charge carriers is n = (3.8 ± 0.3)·1019 cm-3 and n = (2.9 ± 0.2)·1019 cm-3 when using DMF and DMSO solvents, respectively. The formed organic–inorganic perovskite films with DMSO were found to have higher conductivity than films obtained from DMF.



中文翻译:

溶剂对有机-无机钙钛矿薄膜 CH3NH3PbI3 稳定性和电物理性能的影响

研究了 DMF 和 DMSO 溶剂对起始试剂 PbI2:CH 3 NH 3 I = 1:2比例下获得的有机-无机钙钛矿薄膜性能的影响。发现由DMSO中的溶液形成致密的膜。XRD 和荧光光谱表明,DMSO 的使用促进了对水分和辐射不太敏感的钙钛矿薄膜的形成。结果表明,从 DMSO 获得的钙钛矿薄膜中电荷载流子的迁移率 (μ = 67 ± 5 cm 2 /V·s) 比从 DMF 获得的薄膜 (μ = 9.1 ± 0.7 cm 2 / V·s) 高一个数量级V·s)。电荷载流子的密度为 n = (3.8 ± 0.3)·10 19 cm -3和 n = (2.9 ± 0.2)·10分别使用 DMF 和 DMSO 溶剂时为19 cm -3。发现用 DMSO 形成的有机-无机钙钛矿薄膜比从 DMF 获得的薄膜具有更高的导电性。

更新日期:2021-07-28
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