Room temperature electroluminescence in the eye safe region of the spectrum over the range 1.7–2.1 μm is demonstrated from a thulium doped silicon diode. The same room temperature photoluminescence can be attained on a silicon-on-insulator substrate. The emission lines are from the first excited to ground state of the Tm³⁺ ion, ³F₄→³H₆. A detailed study has been made to establish the optimum implant and processing conditions for efficient room temperature luminescence. The importance of the correct placement of the thulium ions with respect to the depletion region edge and dislocation loops formed upon boron implantation has been established. Tm³⁺ has been demonstrated to lase in other systems and is the basis of widely applied, commercial, optically pumped 2 μm lasers. The demonstration of electroluminescence in silicon and luminescence on an SOI platform are necessary prerequisites for the potential development of Tm injection lasers and optical amplifiers.

掺铥的硅二极管证明了在 1.7-2.1 μm 范围内光谱的人眼安全区域中的室温电致发光。在绝缘体上硅衬底上可以获得相同的室温光致发光。发射线是从 Tm ³⁺离子的第一激发态到基态，³ F ₄ → ³ H ₆。已经进行了详细的研究，以确定有效的室温发光的最佳植入和加工条件。已经确定了相对于耗尽区边缘和硼注入时形成的位错环正确放置铥离子的重要性。TM ³⁺已被证明可以在其他系统中产生激光，并且是广泛应用的商业化光泵 2 μm 激光器的基础。硅中的电致发光和 SOI 平台上的发光演示是 Tm 注入激光器和光放大器潜在发展的必要先决条件。