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Critical Growth Rate of Hydrate Crystal Growth Inhibitors in the Low Growth Rate Region
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2021-07-27 , DOI: 10.1021/acs.cgd.1c00421
Michihiro Muraoka 1 , Malcolm A. Kelland 2 , Yoshitaka Yamamoto 1 , Kiyofumi Suzuki 1
Affiliation  

We tested poly(N-vinylpyrrolidone) (PVP) K-12, K-15, K-30, K-90, poly(N-vinylcaprolactam) (PVCap), tetrapentylammonium bromide (TPeAB), tetrabutylammonium bromide (TBPB), polyacryloylpyrrolidine (PAP), poly(N-isopropylmethacrylamide) (PNIPMAM), and hyperbranched polyesteramide (PEA) as hydrate crystal growth inhibitors (HCGIs). We used a tetrahydrofuran (THF) sII hydrate system using a unidirectional growth apparatus. The HCGI concentration c = 0.5 wt % and the growth rate V ranged from 0.005 to 10 μm s–1. The growth rates of TPeAB, PVP K-12, K-15, TBPB, and PEA were found to be critical in the region of a low growth rate with the degree of supercooling ΔT approaching 0. However, PVP K-30, K-90, PAP, PNIPMAM, and PVCap remained effective at V = 0.005 μm s–1. These results enhance the persuasiveness for the model that the HCGI effect is explained by the residence time on the crystal surface of HCGI, τ, and time interval t* required to increase the interface curvature. In addition, we determined the threshold growth rate of THF hydrate for examining HCGI performance on sII gas hydrate. Thus, when 0.005 ≤ critical growth rate V* < 0.01 μm s–1, the HCGIs are moderate inhibitors on sII gas hydrate. When V* < 0.005 μm s–1, the HCGIs are strong inhibitors on sII gas hydrate.

中文翻译:

低生长速率区水合物晶体生长抑制剂的临界生长速率

我们测试了聚(N-乙烯基吡咯烷酮)(PVP)K-12、K-15、K-30、K-90、聚(N-乙烯基己内酰胺)(PVCap)、四戊基溴化铵(TPeAB)、四丁基溴化铵(TBPB)、聚丙烯酰吡咯烷(PAP)、聚 ( N-异丙基甲基丙烯酰胺) (PNIPMAM) 和超支化聚酯酰胺 (PEA) 作为水合物晶体生长抑制剂 (HCGI)。我们使用使用单向生长装置的四氢呋喃 (THF) sII 水合物系统。HCGI 浓度c = 0.5 wt %,生长速率V范围为 0.005 至 10 μm s –1。发现 TPeAB、PVP K-12、K-15、TBPB 和 PEA 的生长速率在过冷度 Δ T的低生长速率区域是关键的接近 0。然而,PVP K-30、K-90、PAP、PNIPMAM 和 PVCap 在V = 0.005 μm s –1 时仍然有效。这些结果增强了模型的说服力,即 HCGI 效应可以通过 HCGI 晶体表面上的停留时间、τ 和增加界面曲率所需的时间间隔t * 来解释。此外,我们确定了 THF 水合物的阈值增长率,以检查 sII 气体水合物的 HCGI 性能。因此,当 0.005 ≤ 临界增长率V * < 0.01 μm s –1 时,HCGIs 是 sII 气体水合物的中度抑制剂。当V * < 0.005 μm s –1 时,HCGIs 是 sII 气体水合物的强抑制剂。
更新日期:2021-09-01
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