The high-voltage CMOS (HVCMOS) sensors are a novel type of CMOS active pixel sensors for ionizing particles that can be implemented in CMOS processes with deep n-well option. The pixel contains one sensor electrode formed with a deep n-well implanted in a p-type substrate. CMOS pixel electronics, embedded in shallow wells, are placed inside the deep n-well. By biasing the substrate with a high negative voltage and by the use of a lowly doped substrate, a depleted region depth of at least 30 $\mu \text{m}$ can be achieved. The electrons generated by a particle are collected by drift, which induces fast detectable signals. This publication presents a 4.2-cm ² large HVCMOS pixel sensor implemented in a commercial 180-nm process on a lowly doped substrate and its characterization.

中文翻译：

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高压 CMOS 有源像素传感器

高压 CMOS (HVCMOS) 传感器是一种用于电离粒子的新型 CMOS 有源像素传感器，可在具有深 n 阱选项的 CMOS 工艺中实现。该像素包含一个传感器电极，该电极由植入在 p 型衬底中的深 n 阱形成。嵌入浅阱中的 CMOS 像素电子器件放置在深 n 阱内。通过用高负电压偏置衬底并使用低掺杂衬底，耗尽区深度至少为 30 $\mu \text{m}$ 可以实现。粒子产生的电子通过漂移收集，这会产生快速可检测的信号。本出版物介绍了一种 4.2 厘米 ²大型 HVCMOS 像素传感器，该传感器采用商业 180 纳米工艺在低掺杂衬底上实施，并对其进行了表征。