It is my great pleasure to announce the winner of the 2020 Electron Devices Society George E. Smith Award given to a paper published in IEEE Electron Device Letters in 2020. The selection was made by vote of EDL’s Editors. The letter is titled “Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors” and it is authored by Arnout Beckers, Farzan Jazaeri, and Christian Enz, all with the Integrated Circuits Laboratory (ICLAB), Ecole Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland. The letter was published in the February 2020 issue of EDL.

中文翻译：

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社论 2020 年电子器件协会乔治·E·史密斯奖


我很高兴地宣布 2020 年电子器件协会 George E. Smith 奖获奖者是 2020 年发表在 IEEE Electron Device Letters 上的一篇论文。该奖项是由 EDL 编辑投票选出的。这封信的标题是“场效应晶体管中低温亚阈值摆幅的理论极限”，由 Arnout Beckers、Farzan Jazaeri 和 Christian Enz 撰写，三人均来自洛桑联邦理工学院 (EPFL) 集成电路实验室 (ICLAB) ），瑞士纳沙泰尔。这封信发表在 EDL 2020 年 2 月号上。