Junction termination extension (JTE) is a mature edge termination structure in Si and SiC power devices, but remains a technical challenge in GaN due to lack of mature selective area doping technique. In this work, GaN vertical p-n diodes with Hydrogen-Modulated Step Graded JTE (HMSG-JTE) are realized by gradually enlarging photolithography windows for hydrogen plasma treatment and controlled thermal diffusion of hydrogen in p-GaN. HMSG-JTE leads to a gradually decreasing hole distribution outwards from the main junction, which laterally spreads the electric field and mitigates the electric field peak under reverse bias. Consequently, the breakdown voltage of vertical GaN p-n diode is successfully boosted from 661 V (with hydrogen-plasma-based edge termination) to 1489 V with HMSG-JTE.

中文翻译：

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GaN 垂直 pn 二极管中的氢调制阶梯分级结终端扩展


结终端延伸（JTE）是Si和SiC功率器件中成熟的边缘终端结构，但由于缺乏成熟的选择性区域掺杂技术，在GaN中仍然是一个技术挑战。在这项工作中，通过逐渐扩大用于氢等离子体处理的光刻窗口以及p-GaN中氢的受控热扩散，实现了具有氢调制阶梯梯度JTE（HMSG-JTE）的GaN垂直pn二极管。 HMSG-JTE导致空穴分布从主结向外逐渐减少，从而横向扩展电场并减轻反向偏压下的电场峰值。因此，利用 HMSG-JTE，垂直 GaN pn 二极管的击穿电压成功从 661 V（基于氢等离子体的边缘终止）提升到 1489 V。