The low thermal conductivity of Ga2O3 has arguably been the most serious concern for Ga2O3 power and RF devices. Despite many simulation studies, there is no experimental report on the thermal resistance of a large-area, packaged Ga2O3 device. This work fills this gap by demonstrating a 15-A double-side packaged Ga2O3 Schottky barrier diode (SBD) and measuring its junction-to-case thermal resistance ( RθJC) in the bottom-side- and junction-side-cooling configurations. The RθJC characterization is based on the transient dual interface method, i.e., JEDEC 51-14 standard. The RθJC of the junction- and bottom-cooled Ga2O3 SBD was measured to be 0.5 K/W and 1.43 K/W, respectively, with the former RθJC lower than that of similarly-rated commercial SiC SBDs. This low RθJC is attributable to the heat extraction directly from the Schottky junction instead of through the Ga2O3 chip. The RθJC lower than that of commercial SiC devices proves the viability of Ga2O3 devices for high-power applications and manifest the significance of proper packaging for their thermal management.

中文翻译：

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双面封装低热阻（0.5 K/W）Ga钪侽钪肖特基整流器


Ga2O3 的低热导率可以说是 Ga2O3 功率和射频器件最严重的问题。尽管进行了许多模拟研究，但还没有关于大面积封装Ga2O3器件热阻的实验报告。这项工作通过演示 15A 双面封装 Ga2O3 肖特基势垒二极管 (SBD) 并测量其在底侧和结侧冷却配置中的结到外壳热阻 (RθJC) 来填补这一空白。 RθJC 表征基于瞬态双接口方法，即 JEDEC 51-14 标准。测得结冷式和底冷式 Ga2O3 SBD 的 RθJC 分别为 0.5 K/W 和 1.43 K/W，前者的 RθJC 低于类似额定值的商用 SiC SBD。这种低 RθJC 归因于直接从肖特基结而不是通过 Ga2O3 芯片提取热量。 RθJC 低于商用 SiC 器件，证明了 Ga2O3 器件在高功率应用中的可行性，并表明了正确封装对其热管理的重要性。