Planar Gunn diodes on In _0.53 Ga _0.47 As with lengths between 2 and 5 $\mu \text{m}$ have been fabricated and characterized in a temperature range of 10 to 300 K. Two different oscillation regimes are observed depending on temperature. At the higher values, the frequency of the oscillations decreases as the bias increases, as expected for a well-established transit-time domain mode. But below approximately 75 K, the behavior is the opposite, the frequency of the Gunn oscillations increases with the bias. This fact, together with a much lower amplitude of the oscillations, indicate the possible switch to a different oscillation mode in which the domains are not able to attain their complete maturation before reaching the anode.

中文翻译：

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平面 InGaAs 二极管中耿氏振荡的温度行为


In _0.53 Ga _0.47 As 上的平面耿氏二极管，长度在 2 到 5 $\mu \text{m}$ 之间，已在 10 到 300 K 的温度范围内制造和表征。根据温度观察到两种不同的振荡状态。在较高值下，振荡频率随着偏置的增加而降低，正如成熟的时域模式所预期的那样。但在大约 75 K 以下，行为相反，耿氏振荡的频率随着偏置而增加。这一事实，加上低得多的振荡幅度，表明可能会切换到不同的振荡模式，在这种模式下，域在到达阳极之前无法完全成熟。