A plasma-based undoped-HfO ₂ FeFET (ferroelectric FET) with non-volatile memory characteristics is demonstrated. Modifying the O ₂ plasma period in plasma-enhanced atomic layer deposition (PE-ALD) is an effective approach to enhance the remnant polarization ( $\text{P}_{\text {r}}$ ) up to 2P $_{\text {r}} = 25\,\,\mu \text{C}$ /cm ² for the MFM (metal/ferroelectric/metal) structure with ferroelectric undoped-HfO ₂ thin films, and successful integration is implemented for the FeFET. The appropriate O ₂ vacancies ( $\text{V}_{\text {o}}^{{2}+}$ ) benefit the formation of the ferroelectric phase since they play the role of dopants and help orthorhombic phase (o-phase) formation during post-metal annealing (PMA). The $\text{V}_{\text {o}}^{{2}+}$ -rich undoped-HfO ₂ FeFET exhibits a memory window (MW) of 0.5 V, ${5} \times {10}^{{4}}$ switching endurance cycles, and higher than $10^{{4}}$ sec of data retention with $\text{V}_{\text {P/E}} = \pm 5$ V.

中文翻译：

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用于非易失性存储器的原子层沉积等离子体基未掺杂 HfO2 铁电 FET

展示了具有非易失性存储器特性的基于等离子体的未掺杂 HfO ₂ FeFET（铁电 FET）。在等离子体增强原子层沉积 (PE-ALD) 中修改 O ₂等离子体周期是增强剩余极化的有效方法。 $\text{P}_{\text {r}}$ ) 最多 2P $_{\text {r}} = 25\,\,\mu \text{C}$ /cm ²用于具有铁电未掺杂-HfO ₂薄膜的MFM（金属/铁电/金属）结构 ，并且为FeFET实现了成功的集成。适当的 O ₂空位 ( $\text{V}_{\text {o}}^{{2}+}$ ) 有利于铁电相的形成，因为它们在金属后退火 (PMA) 过程中起到掺杂剂的作用并有助于正交相（o 相）的形成。这 $\text{V}_{\text {o}}^{{2}+}$ -富未掺杂的 HfO ₂ FeFET 具有 0.5 V 的存储窗口 (MW)， ${5} \times {10}^{{4}}$ 切换耐久周期，并且高于 $10^{{4}}$ 秒的数据保留时间 $\text{V}_{\text {P/E}} = \pm 5$ 五、