A plasma-based undoped-HfO2 FeFET (ferroelectric FET) with non-volatile memory characteristics is demonstrated. Modifying the O2 plasma period in plasma-enhanced atomic layer deposition (PE-ALD) is an effective approach to enhance the remnant polarization ( Pr) up to 2P r = 25 μC/cm2 for the MFM (metal/ferroelectric/metal) structure with ferroelectric undoped-HfO2 thin films, and successful integration is implemented for the FeFET. The appropriate O2 vacancies ( Vo2+) benefit the formation of the ferroelectric phase since they play the role of dopants and help orthorhombic phase (o-phase) formation during post-metal annealing (PMA). The Vo2+-rich undoped-HfO2 FeFET exhibits a memory window (MW) of 0.5 V, 5 ×104 switching endurance cycles, and higher than 10410^{{4}} sec of data retention with VP/E = ±5 V.

中文翻译：

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用于非易失性存储器的基于原子层沉积等离子体的未掺杂 HfO2 铁电 FET


演示了具有非易失性存储特性的基于等离子体的未掺杂 HfO2 FeFET（铁电 FET）。修改等离子体增强原子层沉积 (PE-ALD) 中的 O2 等离子体周期是将 MFM（金属/铁电/金属）结构的残余极化 ( Pr) 增强至 2P r = 25 μC/cm2 的有效方法铁电未掺杂 HfO2 薄膜，并成功实现了 FeFET 的集成。适当的 O2 空位 (Vo2+) 有利于铁电相的形成，因为它们起到掺杂剂的作用，并有助于在金属后退火 (PMA) 过程中形成斜方相 (o 相)。富含 Vo2+ 的未掺杂 HfO2 FeFET 具有 0.5 V 的存储窗口 (MW)、5 ×104 次开关耐久性周期以及高于 10410^{{4}} 秒的数据保留时间（VP/E = ±5 V）。