In this letter, we demonstrate a reconfigurable logic-memory hybrid device (R-LMHD), which can be dynamically and reversibly switched between the logic- and memory- mode. The logic-mode device exhibits a 2.5×106 ON/ OFF current ratio and nearly zero hysteresis, which indicates the weak influence of defects trapping and de-trapping. The memory-mode device shows a large memory window up to 2.19 V and the window maintains up to 1.44 V after 106 program/erase cycles. The excellent performance can be attributed to the high crystalline quality of ferroelectric Hf0.5Zr0.5O2 (HZO) and the insertion of internal metal gate (IMG) between HZO and dielectric layer. Such R-LMHD features run-time tuning of threshold voltage and hysteresis, electrically reconfigurable. Furthermore, the subthreshold swing (SS) is electrically tunable with a minimum SS ( SSmin) of 35 mV/decade and a maintainability of sub-60 mV/decade about 3 orders. The R-LMHD provides a promising way to realize future in-memory computing and low power consumption applications.

中文翻译：

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基于铁电Hf0.5Zr0.5O2的可重构逻辑存储器混合器件


在这封信中，我们演示了一种可重构逻辑-存储器混合器件（R-LMHD），它可以在逻辑模式和存储器模式之间动态、可逆地切换。逻辑模式器件表现出2.5×106的开/关电流比和接近零的磁滞，这表明缺陷捕获和去捕获的影响较弱。存储器模式器件显示高达 2.19 V 的大存储器窗口，并且在 106 个编程/擦除周期后该窗口保持高达 1.44 V。其优异的性能归功于铁电Hf0.5Zr0.5O2 (HZO)的高结晶质量以及HZO和介电层之间插入的内部金属栅极(IMG)。这种 R-LMHD 具有阈值电压和迟滞的运行时调节功能，并且可进行电气重新配置。此外，亚阈值摆幅 (SS) 可进行电调谐，最小 SS (SSmin) 为 35 mV/十倍频程，并且可维持性为亚 60 mV/十倍频程，大约 3 个数量级。 R-LMHD 为实现未来内存计算和低功耗应用提供了一种有前途的方法。