The CMOS silicon avalanche-mode light-emitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented a superjunction light-emitting diode (SJLED) that offers a higher electroluminescent intensity compared to a conventional AMLED because of its more uniform field distribution. However, for reducing power consumption low-voltage ( $\leq 15\text{V}$ ) SJLEDs are desired, not explored before. In this work we present a TCAD simulation feasibility study of the low-voltage SJLED for various doping concentrations and device dimensions. The results show that for obtaining a constant field, approximately a tenfold more aggressive charge balance condition in the SJLED is estimated than traditionally reported. This is important for establishing a guideline to realize optimized RESURF and SJLEDs in the ever-shrinking advanced CMOS nodes.

中文翻译：

---

低压雪崩模式超结 LED 的电气 TCAD 研究


CMOS 硅雪崩模式发光二极管 (AMLED) 已成为单片光学互连的潜在光源。早些时候，我们推出了一种超级结发光二极管 (SJLED)，与传统 AMLED 相比，它具有更高的电致发光强度，因为它的场分布更均匀。然而，为了降低功耗，需要低压 ( $\leq 15\text{V}$ ) SJLED，但之前没有探索过。在这项工作中，我们提出了针对各种掺杂浓度和器件尺寸的低压 SJLED 的 TCAD 仿真可行性研究。结果表明，为了获得恒定场，SJLED 中的电荷平衡条件预计比传统报道的条件强十倍。这对于制定在不断缩小的先进 CMOS 节点中实现优化 RESURF 和 SJLED 的指南非常重要。