Deep-ultraviolet (DUV) photodetection has garnered extensive research interest for its vital applications in many military and civil fields. In this work, we present the synthesis of a large-area two-dimensional (2D) PdTe2 multilayer, which can be directly transferred onto a GaN substrate to construct a vertical heterostructure for visible-blind DUV photodetection. Upon 265 nm light irradiation, the heterostructure displays a distinct photovoltaic behavior, enabling it to serve as a self-driven photodetector. The important photoresponse parameters, such as Ilight/Idark ratio, responsivity, specific detectivity and DUV/visible (265 nm/450 nm) rejection ratio reach as high as 106, 168.5 mA/W, 5.3 ×1012 Jones, and 104, respectively, at zero bias. The responsivity can be further enhanced to 254.6 mA/W by applying a small reverse bias of -1.0 V. In addition, the photodetector can function as a DUV light image sensor to reliably record an “H” pattern with a decent resolution. The present study paves a way for designing high-performance cost-effective DUV photodetectors towards practical optoelectronic applications.

中文翻译：

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用于可见盲深紫外光电探测的多层PdTe钪/GaN异质结构


深紫外（DUV）光电探测因其在许多军事和民用领域的重要应用而引起了广泛的研究兴趣。在这项工作中，我们提出了大面积二维（2D）PdTe2多层的合成，它可以直接转移到GaN衬底上以构建用于可见盲DUV光电检测的垂直异质结构。在 265 nm 光照射下，异质结构表现出独特的光伏行为，使其能够用作自驱动光电探测器。重要的光响应参数，如Ilight/Idark比、响应度、比探测率和DUV/可见光(265 nm/450 nm)抑制比分别高达106、168.5 mA/W、5.3 ×1012 Jones和104，零偏压时。通过施加 -1.0 V 的小反向偏压，响应度可以进一步增强至 254.6 mA/W。此外，光电探测器可以用作 DUV 光图像传感器，以良好的分辨率可靠地记录“H”图案。本研究为设计高性能、经济高效的 DUV 光电探测器走向实际光电应用铺平了道路。