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Fully Printed Inorganic Schottky Diode
IEEE Electron Device Letters ( IF 4.1 ) Pub Date : 2021-06-08 , DOI: 10.1109/led.2021.3086849
Thomas T. Daniel , Vimal Kumar Singh Yadav , Gayatri Natu , Roy Paily

Inorganic semiconductors have the potential features to enhance the stability and performance of printed electronic devices. In this work, we present a microcantilever (μC) printed device by using zinc oxide (ZnO) and silver nanoparticles (AgNP) ink. Two types of devices havebeen fabricated on silicon wafers using two methods: (i) theZnO ink is printed between twoμC printed AgNP electrodes separated within a sub-5μm gap (ii) the ZnO ink havebeen drop-casted between twoμC printed AgNP electrodes.Therefore the first type of devices is a fully printed structure.The measurements of both devices show distinct electrical aspects corresponding to the different additive fabrication approach. Furthermore, the fully printed Schottky diode exhibits a remarkable high on/off current ratio of 1.85×105 at room temperature with a barrier height of 0.49 eV and series resistance of 594 kΩ

中文翻译:


全印刷无机肖特基二极管



无机半导体具有增强印刷电子设备稳定性和性能的潜在特性。在这项工作中,我们提出了一种使用氧化锌(ZnO)和银纳米颗粒(AgNP)墨水印刷的微悬臂梁(μC)器件。使用两种方法在硅晶片上制造了两种类型的器件:(i) 将 ZnO 油墨印刷在两个 μC 印刷的 AgNP 电极之间,这两个电极之间的间隙小于 5μm;(ii) 将 ZnO 油墨滴涂在两个 μC 印刷的 AgNP 电极之间。第一种类型的器件是完全印刷的结构。两种器件的测量显示出与不同的增材制造方法相对应的不同的电气方面。此外,全印刷肖特基二极管在室温下表现出 1.85×105 的极高开/关电流比,势垒高度为 0.49 eV,串联电阻为 594 kΩ
更新日期:2021-06-08
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