Progress on improving the thermoelectric power factor (PF) of InGaZnO thin films by various surface treatment techniques has been seriously hindered by the innate coupled but opposing relationship between its electrical conductivity ( σe) and Seebeck coefficient (S). Therefore, proposing unique solutions to decouple these properties is crucial in advancing its thermoelectric performance. This study demonstrates that the S - σe coupled relationship can be suppressed by integrating InGaZnO in an InGaZnO/SiO2 thin film transistor, leading to a significantly enhanced PF compared to pristine InGaZnO thin films. An exponential increase in σe was observed without the typical severe decline in S. An extremely narrow charge accumulation layer near the InGaZnO/SiO2 interface could have formed under a positive applied gate voltage ( VG), causing a dramatic reduction of the thermoelectrically active region to an almost two-dimensional surface. By utilizing the Kamiya-Nomura percolation modeling, it was observed that energy filtering occurs at the InGaZnO/SiO2 interface. This likely causes a change in the shape of the potential barriers, which leads to the suppression of the S - σe coupling relationship.

中文翻译：

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通过栅极可调能量滤波提高InGaZnO/SiO钪薄膜晶体管的热电功率因数


InGaZnO薄膜的电导率(σe)和塞贝克系数(S)之间固有的耦合但相反的关系严重阻碍了通过各种表面处理技术提高InGaZnO薄膜热电功率因数(PF)的进展。因此，提出独特的解决方案来解耦这些特性对于提高其热电性能至关重要。这项研究表明，通过将 InGaZnO 集成到 InGaZnO/SiO2 薄膜晶体管中，可以抑制 S - σe 耦合关系，从而与原始 InGaZnO 薄膜相比，PF 显着增强。观察到 σe 呈指数增加，而 S 没有典型的严重下降。在施加正栅极电压 (VG) 的情况下，InGaZnO/SiO2 界面附近可能会形成极窄的电荷积累层，导致热电活性区域急剧减少几乎二维的表面。通过利用 Kamiya-Nomura 渗流模型，观察到能量过滤发生在 InGaZnO/SiO2 界面处。这可能会导致势垒形状的变化，从而导致 S - σe 耦合关系的抑制。