In this letter, a wideband bandpass filter for 5G application is proposed. The filter is implemented in GF 45-nm CMOS SOI (silicon-on-insulator) and is a 4-pole/ 4-zero design which greatly enhance the filter selectivity and out-of-band rejection. Measurements show a filter 3-dB bandwidth of 22-44 GHz, and covers the millimeter-wave 5G 26/28/39 GHz bands. The minimum insertion loss is 1.5 dB with a return loss better than 10 dB and a filter size of 0.07 mm ² . The work shows that wideband high-performance filter can be integrated as part of the wideband/multiband RF front-end on CMOS SOI.

中文翻译：

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用于 45-nm CMOS 绝缘体上硅中的 5G 毫米波应用的宽带带通滤波器

在这封信中，提出了一种用于 5G 应用的宽带带通滤波器。该滤波器采用 GF 45-nm CMOS SOI（绝缘体上硅）实现，采用 4 极点/4 零设计，极大地增强了滤波器选择性和带外抑制。测量显示滤波器 3-dB 带宽为 22-44 GHz，并覆盖毫米波 5G 26/28/39 GHz 频段。最小插入损耗为 1.5 dB，回波损耗优于 10 dB，滤波器尺寸为 0.07 mm ² 。工作表明，宽带高性能滤波器可以集成为 CMOS SOI 上的宽带/多频带 RF 前端的一部分。