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PL Spectra and Hot Charge Carrier Phenomena in an Undoped GaAs/AlGaAs Tunnel-Coupled Quantum Well
Journal of Nanomaterials ( IF 3.791 ) Pub Date : 2021-07-27 , DOI: 10.1155/2021/5606173
Kanothai Jarusirirangsi 1 , Paphavee van Dommelen 1, 2 , Chalongrat Daengngam 1, 2
Affiliation  

In this research, we experimentally investigated the photoluminescence (PL) spectra of an undoped GaAs/Al0.36Ga0.64As Tunnel-Coupled Quantum Well (TCQW) at 300 K and 77 K. At 300 K, PL spectra were broadened at various laser intensities due to the characteristic quantum-confinement electron levels in the active region of the TCQW during pumping excitation. At 77 K, at selected excitation intensities, the high-energy tails in the PL spectra of the studied structure corresponded with hot electron temperatures as functions of the energy of emitted photons. The average scattering energy rate of hot electrons in the system was also studied at a lattice temperature of 77 K. The average scattering energy rate of hot electrons obtained from this experimental study was in agreement with the calculated theoretical value.

中文翻译:

未掺杂 GaAs/AlGaAs 隧道耦合量子阱中的 PL 光谱和热载流子现象

在这项研究中,我们通过实验研究了未掺杂的 GaAs/Al 0.36 Ga 0.64的光致发光 (PL) 光谱作为隧道耦合量子阱 (TCQW) 在 300 K 和 77 K。在 300 K 时,由于在泵浦激发期间 TCQW 的有源区域中的特征量子限制电子能级,PL 光谱在不同的激光强度下变宽。在 77 K 时,在选定的激发强度下,所研究结构的 PL 光谱中的高能尾部与作为发射光子能量函数的热电子温度相对应。在晶格温度为 77 K 时,还研究了系统中热电子的平均散射能率。从该实验研究中获得的热电子的平均散射能率与计算的理论值一致。
更新日期:2021-07-27
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