Extended x-ray absorption fine structure spectroscopy was used to investigate the neighborhood of In and Sb atoms in InSb films deposited by magnetron sputtering and subsequently irradiated with 14 MeV Au⁺⁶ ions at room temperature, with ion fluences ranging from 1 × 10¹³ cm⁻² to 2 × 10¹⁴ cm⁻². For the first nearest-neighbor shell, the structural parameters were unaffected by ion irradiation up to 1 × 10¹⁴ cm⁻². However, the irradiation-induced disorder was observed for the second and third nearest-neighbor shells through decrease (increase) of the coordination number (Debye-Waller factor). Upon ion irradiation, InSb films become porous while still retaining part of their crystallinity. Using x-ray absorption near edge structure, it was observed that In K-edge and Sb K-edge positions are unchanged as a function of ion fluence in InSb, evidencing that the energy of the element-specific unoccupied local states is independent of ion fluences used in this work. For the highest irradiation fluence (2 × 10¹⁴ cm⁻²), part of InSb is converted to In₂O₃, Sb₂O₃, Sb₂O₅ and metallic Sb, representing a fraction of $~$26%, $~$7%, $~$11%, and $~$9%, respectively. This increase in antimony and indium oxides at this irradiation fluence was attributed to the combination of the high reactivity, in the presence of oxygen, of the InSb surface with the enhanced surface-area-to-volume ratio of the porous structure.

扩展的 X 射线吸收精细结构光谱用于研究通过磁控溅射沉积的 InSb 薄膜中 In 和 Sb 原子的邻域，随后在室温下用 14 MeV Au ⁺⁶离子照射，离子注量范围为 1 × 10 ¹³  cm ^-2至 2 × 10 ¹⁴  cm ^-2。对于第一个最近邻壳，结构参数不受高达 1 × 10 ¹⁴  cm ^{-2 的}离子辐射的影响. 然而，通过减少（增加）配位数（Debye-Waller 因子），观察到第二和第三最近邻壳的辐射引起的紊乱。在离子照射下，InSb 薄膜变得多孔，同时仍保留其部分结晶度。使用近边缘结构的 x 射线吸收，观察到 In K 边缘和 Sb K 边缘位置作为 InSb 中离子注量的函数不变，证明元素特定未占据局部态的能量与离子无关在这项工作中使用的影响。对于最高辐照通量 (2 × 10 ¹⁴ cm ^-2 )，部分 InSb 转化为 In ₂ O ₃、Sb ₂ O ₃、Sb ₂ O₅和金属 Sb，代表一小部分$~$26%, $~$7%, $~$11%，和 $~$分别为 9%。在此辐照通量下锑和氧化铟的这种增加归因于 InSb 表面在氧气存在下的高反应性与多孔结构的表面积与体积比提高的组合。