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Physical Sputtering of a Copper Anode of a Planar Magnetron by a Beam of Accelerated Argon Ions with an Energy of 1–10 keV
Instruments and Experimental Techniques ( IF 0.4 ) Pub Date : 2021-07-27 , DOI: 10.1134/s0020441221040242
A. P. Semenov 1 , I. A. Semenova 1 , D. B.-D. Tsyrenov 1 , E. O. Nikolaev 1
Affiliation  

During the approximation of kinetic energy transfer in collision cascades, a numerical estimate of the sputtering coefficient of the copper anode of a magnetron is considered. It has been shown that when a 1–10 keV ion beam is injected into a magnetron, the sputtering coefficient of the copper anode of the magnetron is three to six atoms per incident ion, which makes it possible to introduce and control impurities, in particular copper, under conditions of synthesis of superhard TiN–Cu coatings by reactive magnetron sputtering and directed action on the nanocrystalline structure of the coatings with high accuracy and in small fractional ratios (units of at %).



中文翻译:

通过能量为 1-10 keV 的加速氩离子束物理溅射平面磁控管的铜阳极

在碰撞级联动能转移的近似过程中,考虑了磁控管铜阳极溅射系数的数值估计。研究表明,当将 1-10 keV 离子束注入磁控管时,磁控管铜阳极的溅射系数为每个入射离子 3-6 个原子,这使得引入和控制杂质成为可能,特别是铜,在通过反应磁控溅射合成超硬 TiN-Cu 涂层的条件下,以高精度和小分数比率(单位为原子百分比)对涂层的纳米晶结构进行定向作用。

更新日期:2021-07-27
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