Low operational stability and undesirable shift of electrical properties at ambient conditions are the major barriers in the commercialization of organic field-effect transistors (OFETs). In this study, we report an improvement in operational stability of solution-processable polymer Poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno[3,2-b]thiophene)] (DPPDTT) based OFETs by applying bias stress for short times. Two types of devices were fabricated using i) bare Si₃N₄ as gate dielectric that offers higher interfacial traps and ii) using an additional layer of PMMA along with Si₃N₄ that offers lower interfacial traps. The OFET with PMMA layer shows better performance i.e. threshold voltage around 15 V, mobility~0.2 cm²/V.s and current on/off ratio in the range of 10⁶. The bias stress measurements show the initial decrease in the performance parameters in both devices. However, the device with lower traps shows a smaller decrease in the performance parameters and achieves a stable performance when devices are put under continuous gate bias stress, while the high trap state device continued to degrade. The reported results provide a route to achieve good stability in the electrical performance of OFETs in ambient conditions.

环境条件下的低运行稳定性和电特性的不良变化是有机场效应晶体管 (OFET) 商业化的主要障碍。在这项研究中，我们报告了溶液可加工聚合物 Poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole- alt -5,5-(2,5-di(thien-2 -yl)噻吩并[3,2- b ]噻吩)]（DPPDTT）通过短时间施加偏置应力来实现。使用 i) 裸 Si ₃ N ₄作为提供更高界面陷阱的栅极电介质和 ii) 使用额外的 PMMA 层以及 Si ₃ N ₄制造两种类型的器件提供较低的界面陷阱。具有PMMA 层的OFET 表现出更好的性能，即15 V 左右的阈值电压、迁移率~0.2 cm ² /Vs 和10 ⁶范围内的电流开/关比。偏置应力测量表明两种器件的性能参数都出现了初始下降。然而，当器件置于连续的栅极偏置应力下时，具有较低陷阱的器件的性能参数下降较小，并实现稳定的性能，而高陷阱态器件则继续退化。报告的结果提供了在环境条件下实现 OFET 电性能良好稳定性的途径。