In order to improve the reliability of InGaN light-emitting diodes (LEDs), the size-dependence of V-shaped pits on the electric and luminous properties was investigated. By adjusting the thickness of the barrier layer of the stress buffer layer, thereby increasing the size of the V-pits, the electro-static discharge (ESD) yield of the InGaN LED can be increased from 0 % to 98 % at negative 4000 V. At the same time, the aging attenuation of the device is significantly reduced. The results show that increasing the size of V-pits is beneficial to the reliability of InGaN LEDs. As the V-pits provide an additional current channel, which effectively reduces the current distribution density of the device's C-plane quantum well (light emitting region) under the impact of large current, thus avoiding the thermal breakdown effect caused by the excessive local current, and the ESD yield of the device is significantly increased. At the operating voltage, the difference of the band gap generated by the V-pits is a barrier to the carriers near the dislocations, which effectively avoids the non-radiation recombination of the carriers on the dislocation, resulting in a reduction in the aging attenuation.

为了提高 InGaN 发光二极管 (LED) 的可靠性，研究了 V 形凹坑对电学和发光特性的尺寸依赖性。通过调整应力缓冲层的阻挡层的厚度，从而增加V-pit的尺寸，InGaN LED的静电放电（ESD）良率可以在负4000 V时从0%提高到98% . 同时，器件的老化衰减显着降低。结果表明，增加 V 坑的尺寸有利于 InGaN LED 的可靠性。由于V-pits提供了额外的电流通道，有效降低了器件C面量子阱（发光区）在大电流冲击下的电流分布密度，从而避免局部电流过大引起的热击穿效应，显着提高器件的ESD良率。在工作电压下，V-pits产生的带隙差异对位错附近的载流子形成屏障，有效避免了位错上载流子的非辐射复合，从而降低了时效衰减.