In this study, high-performance ternary Cu-0.13 wt% Cr-0.04 wt% Zr (Cu–Cr–Zr) alloy films on flexible polyimide (PI) substrate were investigated for the metallization of flexible thin-film transistor. The optimized Cu–Cr–Zr film was endowed excellent electrical resistivity (21.7 mΩ μm) and adhesion strength (5 B). The results showed that the sputtering rate increased with the increase of the sputtering power and pressure, and the adhesion strength tended to increase while the resistivity decreased with the rise of annealing temperature. X-ray diffraction (XRD) analysis showed that the copper grain size increased significantly as the rise of annealing temperature, which indicates the attenuation of the grain boundary scattering and accounts for the decrease of the resistivity. Compared with the glass substrate, lower resistance was achieved on PI substrate, which is related to the surface morphology. The smoothness and adhesion of the Cu–Cr–Zr film were improved more distinctly on the PI substrate can be attributed to more low interfacial energy sites of PI. Further mechanical bending test demonstrated that the robust Cu–Cr–Zr film has good stability and durability without significant deterioration after 50 k times bending.

在这项研究中，研究了柔性聚酰亚胺 (PI) 衬底上的高性能三元 Cu-0.13 wt% Cr-0.04 wt% Zr (Cu-Cr-Zr) 合金薄膜用于柔性薄膜晶体管的金属化。优化后的 Cu-Cr-Zr 薄膜具有优异的电阻率 (21.7 mΩ μm) 和粘附强度 (5 B)。结果表明，溅射速率随着溅射功率和压力的增加而增加，附着强度随着退火温度的升高而增加，而电阻率呈下降趋势。X射线衍射（XRD）分析表明，随着退火温度的升高，铜晶粒尺寸显着增加，这表明晶界散射减弱并解释了电阻率的降低。与玻璃基板相比，在 PI 基板上实现了较低的电阻，这与表面形态有关。Cu-Cr-Zr 薄膜的光滑度和附着力在 PI 基底上得到更明显的改善，这可归因于 PI 的更多低界面能位点。进一步的机械弯曲试验表明，坚固的 Cu-Cr-Zr 薄膜在弯曲 50k 次后具有良好的稳定性和耐久性，而没有显着劣化。