The development of p-n diodes formed on thin TMDs is an essential element for facilitating structural miniaturization for optoelectronic applications. So far, 2D materials-based heterostructures involved contact effect and are not entirely related to heterointerfaces. Here, we fabricated and studied the diode rectification of 2D materials-based heterostructures using nanoflakes of p-MoTe₂ and n-MoSe₂. Asymmetric contacts are employed (Al/Au/n-MoSe₂) and (Pt/Au/p-MoTe₂) and achieved a rectification ratio up to 10⁵ to different gate bias. The value of the n is extracted to be (1.5) at zero gate bias. Besides, the device exhibited a responsivity (R) of 430 mAW⁻¹ and external quantum efficiency (EQE) of 98 % at V_bg = 0 V. A built-in potential was detected, which gave rise to open-circuit voltage (V_OC) at I_ds = 0 A and short circuit current (I_SC) at V_ds = 0 V. Furthermore, we also studied that rectifying behavior can be seen in a 2D nanoflake by utilizing asymmetric metal contacts. These findings can have potential applications in upcoming nano-level devices.

在薄 TMD 上形成 pn 二极管的发展是促进光电应用结构小型化的重要因素。到目前为止，基于二维材料的异质结构涉及接触效应，与异质界面并不完全相关。在这里，我们使用 p-MoTe ₂和 n-MoSe _{2 的}纳米薄片制造并研究了基于二维材料的异质结构的二极管整流。采用非对称接触（Al/Au/n-MoSe ₂）和（Pt/Au/p-MoTe ₂）并实现了高达10 ⁵对不同栅极偏压的整流比。在零栅极偏置时，n 的值被提取为 (1.5)。此外，该器件的响应度 (R) 为 430 mAW ^-1和外部量子效率的在V 98％（EQE）_BG  = 0 V.内置的电位检测，这产生了开路电压（V _OC在I）_DS  = 0 A和短路电流（I _SC ) 在 V _ds  = 0 V。此外，我们还研究了通过利用不对称金属触点可以在 2D 纳米薄片中看到整流行为。这些发现可能在即将推出的纳米级设备中具有潜在应用。