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Self-biased photovoltaic behavior in van der Waals MoTe2/MoSe2 heterostructures
Physica E: Low-dimensional Systems and Nanostructures ( IF 2.9 ) Pub Date : 2021-07-26 , DOI: 10.1016/j.physe.2021.114912
Sikandar Aftab 1 , Samiya 2 , Muhammad Waqas Iqbal 3 , Hafiz Muhammad Salman Ajmal 4 , Mavra Ishfaq 5 , Muhammad Javaid Iqbal 6 , Muhammad Zahir Iqbal 7
Affiliation  

The development of p-n diodes formed on thin TMDs is an essential element for facilitating structural miniaturization for optoelectronic applications. So far, 2D materials-based heterostructures involved contact effect and are not entirely related to heterointerfaces. Here, we fabricated and studied the diode rectification of 2D materials-based heterostructures using nanoflakes of p-MoTe2 and n-MoSe2. Asymmetric contacts are employed (Al/Au/n-MoSe2) and (Pt/Au/p-MoTe2) and achieved a rectification ratio up to 105 to different gate bias. The value of the n is extracted to be (1.5) at zero gate bias. Besides, the device exhibited a responsivity (R) of 430 mAW−1 and external quantum efficiency (EQE) of 98 % at Vbg = 0 V. A built-in potential was detected, which gave rise to open-circuit voltage (VOC) at Ids = 0 A and short circuit current (ISC) at Vds = 0 V. Furthermore, we also studied that rectifying behavior can be seen in a 2D nanoflake by utilizing asymmetric metal contacts. These findings can have potential applications in upcoming nano-level devices.



中文翻译:

范德瓦尔斯 MoTe2/MoSe2 异质结构中的自偏置光伏行为

在薄 TMD 上形成 pn 二极管的发展是促进光电应用结构小型化的重要因素。到目前为止,基于二维材料的异质结构涉及接触效应,与异质界面并不完全相关。在这里,我们使用 p-MoTe 2和 n-MoSe 2 的纳米薄片制造并研究了基于二维材料的异质结构的二极管整流。采用非对称接触(Al/Au/n-MoSe 2)和(Pt/Au/p-MoTe 2)并实现了高达10 5对不同栅极偏压的整流比。在零栅极偏置时,n 的值被提取为 (1.5)。此外,该器件的响应度 (R) 为 430 mAW -1和外部量子效率的在V 98%(EQE)BG  = 0 V.内置的电位检测,这产生了开路电压(V OC在I)DS  = 0 A和短路电流(I SC ) 在 V ds  = 0 V。此外,我们还研究了通过利用不对称金属触点可以在 2D 纳米薄片中看到整流行为。这些发现可能在即将推出的纳米级设备中具有潜在应用。

更新日期:2021-07-28
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