As Moore's law is gradually losing its effectiveness, the development of alternative high-speed and low-energy–consuming information technology with postsilicon-advanced materials is urgently needed. The successful application of tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) has given rise to a tremendous economic impact on magnetic informatics, including magnetoresistive random access memory (MRAM), radiofrequency sensors, microwave generators, and neuromorphic computing networks. The emergence of two-dimensional (2D) materials brings opportunities for MTJs based on 2D materials, which have many attractive characteristics and advantages. In particular, the recently discovered intrinsic 2D ferromagnetic materials with high spin polarization hold the promise for next-generation nanoscale MTJs. Various 2D materials, such as semimetallic graphene, insulating h-BN, semiconducting MoS₂, magnetic semiconducting CrI₃, magnetic metallic Fe₃GeTe₂, and some other recently emerged 2D materials, are discussed as the electrodes and/or central scattering materials of MTJs in this review. We discuss the fundamental and main issues facing MTJs; review the current progress made with 2D MTJs; briefly comment on work with some specific 2D materials and highlight how they address the current challenges in MTJs; and, finally, offer an outlook and perspective of 2D MTJs.

中文翻译：

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用于自旋电子应用的二维材料磁性隧道结的最新进展和挑战

随着摩尔定律逐渐失效，迫切需要开发具有后硅先进材料的替代性高速、低能耗信息技术。隧道磁阻 (TMR) 在磁隧道结 (MTJ) 中的成功应用对磁信息学产生了巨大的经济影响，包括磁阻随机存取存储器 (MRAM)、射频传感器、微波发生器和神经形态计算网络。二维 (2D) 材料的出现为基于 2D 材料的 MTJ 带来了机会，其具有许多吸引人的特性和优势。特别是，最近发现的具有高自旋极化的本征 2D 铁磁材料有望用于下一代纳米级 MTJ。各种二维材料，_{在图 2 中}，磁性半导体 CrI ₃、磁性金属 Fe ₃ GeTe ₂和一些其他最近出现的 2D 材料在这篇评论中被讨论为 MTJ 的电极和/或中心散射材料。我们讨论了 MTJ 面临的基本和主要问题；审查 2D MTJ 的当前进展；简要评论一些特定 2D 材料的工作，并强调它们如何解决 MTJ 中的当前挑战；最后，提供 2D MTJ 的前景和观点。