Samples of Ni-30Cr alloy were oxidized at different temperatures from 500 to 900 °C in a nominal oxygen partial pressure of 5 × 10⁻⁶ atm. The parabolic rate constants for growth of the oxide scales, which were confirmed to be chromia, were in agreement with the literature following an Arrhenius law. The semiconductor character of the chromia scale was investigated in order to reveal the nature of the dominant point defects responsible for the diffusion process during oxidation. An n-type semiconductor was found at low temperature (500 °C), and p-type semiconductor at high temperature (900 °C). Our results suggest that oxygen vacancies and chromium vacancies are dominant in grown chromia of n- and p-type, respectively.

Ni-30Cr 合金样品在 500 到 900°C 的不同温度下在 5×10 ^-6  atm的标称氧分压下氧化。根据阿伦尼乌斯定律，氧化皮生长的抛物线速率常数被证实是氧化铬，与文献一致。研究了氧化铬鳞片的半导体特性，以揭示导致氧化过程中扩散过程的主要点缺陷的性质。一个Ñ型半导体在低温（500℃），并且发现p型半导体在高温（900℃）。我们的结果表明氧空位和铬空位在n - 和p 的生长氧化铬中占主导地位- 类型，分别。