The conventional monolithic integration of silicon PIN detector as △E-E telescope suffer from incompatibility with IC process, signal crosstalk, high cost, etc.. In this paper, integrated silicon PIN detector based on Al-Sn-Al bonding is proposed. The intermediate conductive layer between thin and thick PIN structure comprises of metallic bonding layer, which can reduce the signal crosstalk. Moreover, the novel integration process enables known-good-die (KGD) bonding of thin and thick PIN structure, which increases flexibility and reliability of the fabrication process. Besides, the fabrication reduces the cost and increases reliability by utilizing silicon integrated process.

传统的单片集成硅PIN探测器如△ E- E望远镜存在与IC工艺不兼容、信号串扰、成本高等问题。本文提出了一种基于Al-Sn-Al键合的集成硅PIN探测器。薄和厚PIN结构之间的中间导电层包括金属键合层，可以减少信号串扰。此外，新颖的集成工艺可以实现薄和厚 PIN 结构的已知良好芯片 (KGD) 键合，从而提高了制造工艺的灵活性和可靠性。此外，该制造通过利用硅集成工艺降低了成本并提高了可靠性。