Abstract

The results of structural studies of GaN nanowires containing screw dislocations are presented. It is found that the length of the Burgers vector of dislocations may reach 5 nm, i.e., exceed many times the c parameter of the gallium nitride unit cell. The formation of such dislocations leads in some cases to the occurrence of an ordered sequence of basal stacking faults with a period of 1.3–3.9 nm.

中文翻译：

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氮化镓纳米线中螺旋位错的异常大汉堡矢量

摘要

介绍了包含螺旋位错的 GaN 纳米线的结构研究结果。发现位错的Burgers矢量长度可以达到5nm，即超过氮化镓晶胞的c参数很多倍。在某些情况下，这种位错的形成会导致出现周期为 1.3-3.9 nm 的有序的基底堆垛层错序列。