Abstract

The structure and luminescence properties of Czochralski-grown n-Si samples implanted with oxygen ions have been comprehensively analyzed using photoluminescence and transmission electron microscopy (TEM). A high oxygen concentration (5 × 10¹⁹ cm^–3) in a layer at a depth of 0.3–0.8 µm was obtained in the implanted material. The samples have been annealed according to the multistage technique, including low-temperature (650/800°C) and high-temperature (1000°C) stages, to obtain oxygen precipitates and a system of various extended defects. The structure of the dislocation-photoluminescence spectrum is determined by the features of interaction of dislocations with oxygen during annealing. It is established that decoration of dislocations with oxygen precipitates leads to quenching the D1 and D2 lines. The strong D1 line is due to “pure” (without oxygen precipitates) dislocations. Free amorphous oxygen precipitates emit at a wavelength of 1476 nm.

中文翻译：

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O+ 注入硅层的扩展缺陷及其发光

摘要

已使用光致发光和透射电子显微镜 (TEM) 全面分析了注入氧离子的直拉生长n - Si 样品的结构和发光特性。高氧浓度（5 × 10 ¹⁹ cm ^–3) 在植入材料中获得了 0.3-0.8 µm 深度的层。样品根据多阶段技术进行退火，包括低温（650/800°C）和高温（1000°C）阶段，以获得氧沉淀物和各种扩展缺陷的系统。位错-光致发光光谱的结构是由位错在退火过程中与氧相互作用的特征决定的。已确定用氧析出物修饰位错导致淬灭D 1 和D 2 线。强D 1 线是由于“纯”（无氧沉淀）位错。游离无定形氧沉淀物在 1476 nm 的波长下发射。