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Electromagnetic–Thermo–Mechanical Coupling Behavior of Cu/Si Layered Thin Plate Under Pulsed Magnetic Field
Acta Mechanica Solida Sinica ( IF 2.0 ) Pub Date : 2021-07-24 , DOI: 10.1007/s10338-021-00250-y
Qicong Li 1 , Linli Zhu 1 , Haihui Ruan 2
Affiliation  

Semiconductor-based electronic devices usually work under multiphysics fields rendering complex electromagnetic–thermo–mechanical coupling. In this work, we develop a penalty function method based on a finite element analysis to tackle this coupling behavior in a metal/semiconductor bilayer plate—the representative unit of semiconductor antenna, which receives strong and pulsed electromagnetic signals. Under these pulses, eddy current is generated, of which the magnitude varies remarkably from one plate to another due to the difference in electrical conductivity. In the concerned system, the metal layer generates much larger current, resulting in the large temperature rise and the nonnegligible Lorentz force, which could lead to delamination and failure of the semiconductor-based electronic device. This study provides theoretical guidance for the design and protection of semiconductor-based electronic devices in complex environments.



中文翻译:

脉冲磁场下Cu/Si层状薄板的电磁-热-机械耦合行为

基于半导体的电子设备通常在多物理场下工作,呈现复杂的电磁-热-机械耦合。在这项工作中,我们开发了一种基于有限元分析的惩罚函数方法,以解决金属/半导体双层板(半导体天线的代表单元)中的这种耦合行为,该板接收强脉冲电磁信号。在这些脉冲下,会产生涡流,由于电导率的不同,涡流的大小从一块板到另一块板变化很大。在相关系统中,金属层产生更大的电流,导致较大的温升和不可忽略的洛伦兹力,这可能导致基于半导体的电子器件分层和失效。

更新日期:2021-07-24
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