Radio-Frequency Reflectometry in Silicon-Based Quantum Dots,Physical Review Applied

当前位置： X-MOL 学术 › Phys. Rev. Appl. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Radio-Frequency Reflectometry in Silicon-Based Quantum Dots
Physical Review Applied ( IF 3.8 ) Pub Date : 2021-07-23 , DOI: 10.1103/physrevapplied.16.014057
Y.-Y. Liu ₁ , S.G.J. Philips ₂ , L.A. Orona ₁ , N. Samkharadze ₃ , T. McJunkin ₄ , E.R. MacQuarrie ₄ , M.A. Eriksson ₄ , L.M.K. Vandersypen ₂ , A. Yacoby ₁

Affiliation

Radio-frequency (rf) reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of rf readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that on-chip modifications enable high-performance charge readout in

Si

{Si}_{x}

{Ge}_{1 - x}

quantum dots, achieving a fidelity of 99.9% for a measurement time of

1 μ s

.

中文翻译：

硅基量子点中的射频反射计

射频 (rf) 反射计为门控量子点中的电荷传感和自旋读出提供了一种快速而灵敏的方法。我们在这项工作中专注于在累积模式栅极定义的量子点中实现射频读出，其中大的寄生电容构成了挑战。我们描述并测试了两种减轻寄生电容影响的方法，一种是通过片上修改，另一种是通过片外更改。我们证明了片上修改能够实现高性能电荷读出