The universal formulae for λ(χ_real, E_g, T) and λ(χ_real, E_g, T)_p of insulator having less impurities are experimentally proved, where λ(χ_real, E_g, T) is the mean escape depth at Kelvin temperature T of secondary electrons emitted from insulators with band gap E_g and efficient electron affinity χ_real, λ(χ_real, E_g, T)_p is the λ(χ_real, E_g, T) due to electron-lattice interaction. Based on the mechanism of electron-insulator interaction, experimental data, existing formulae, ESTAR program and formulae for λ(χ_real, E_g, T) and λ(χ_real, E_g, T)_p of insulator having less impurities, the methods of obtaining λ(χ_real, E_g, T)_e-e, λ(χ_real, E_g, T)_e-defect and λ(χ_real, E_g, T)_i are presented, where λ(χ_real, E_g, T)_e-e is the λ(χ_real, E_g, T) due to electron–electron interaction, λ(χ_real, E_g, T)_e-defect is the λ(χ_real, E_g, T) due to electron–defect interaction, λ(χ_real, E_g, T)_i is the λ(χ_real, E_g, T) due to electron-impurity interaction. The λ(χ_real, E_g, T)_p, λ(χ_real, E_g, T)_e-e, λ(χ_real, E_g, T)_e-defect and λ(χ_real, E_g, T)_i can provide corresponding information regarding electron-insulator interaction. Thus, it can be concluded that the method of investigating electron-insulator interaction by secondary electron emission SEE is successfully presented in this work. According to experimental data, formula for λ(χ_real, E_g, T), ESTAR program, calculated parameters of primary range and existing formulae for SEE, the method of calculating the ẟ at different T and in the range of 1.0 keV ≤ E_po ≤ 100.0 keV from insulator having less impurities is successfully presented, where ẟ is secondary electron yield, E_po is incident energy of primary electron.

实验证明了杂质较少的绝缘体的λ ( χ _real , E _g , T ) 和λ ( χ _real , E _g , T ) _p的通用公式，其中λ ( χ _real , E _g , T )为平均逃逸从具有带隙E _g和有效电子亲和势 χ _real , λ 的绝缘体发射的二次电子在开尔文温度T下的深度( χ _real , E _g , T ) _p是由于电子-晶格相互作用而产生的λ ( χ _real , E _g , T )。基于电子-绝缘体相互作用的机理、实验数据、现有公式、ESTAR 程序和λ ( χ _real , E _g , T ) 和λ ( χ _real , E _g , T ) _{p 的}公式对于杂质较少的绝缘体，给出了λ ( χ _real , E _g , T ) _ee、λ ( χ _real , E _g , T ) _e-defect和λ ( χ _real , E _g , T ) _i的获得方法，其中λ ( χ _real , E _g , T ) _ee是λ ( χ_real , E _g , T ) 由于电子-电子相互作用, λ ( χ _real , E _g , T ) _e-defect是λ ( χ _real , E _g , T ) 由于电子-缺陷相互作用, λ ( χ _real , E _g , T ) , E _g , T ) _i是λ ( χ _real , E _g , T) 由于电子-杂质相互作用。的λ（χ_真实，ê_克，Ť）_p，λ（χ_真实，ê_克，Ť）_EE，λ（χ_真实，ê_克，Ť）_电子缺陷和λ（χ_真实，ê_克，Ť）_我可以提供有关电子-绝缘体相互作用的相应信息。因此，可以得出结论，在这项工作中成功地提出了通过二次电子发射 SEE 研究电子-绝缘体相互作用的方法。根据实验数据，λ ( χ _real , E _g , T ) 的公式、ESTAR 程序、主要范围的计算参数和现有的 SEE 公式、不同T和 1.0 keV ≤ E范围内 的ẟ的计算方法_po  ≤ 100.0 keV 来自具有较少杂质的绝缘体被成功地呈现，其中ẟ是二次电子产率，E _po是初级电子的入射能量。