Accurate junction temperature measurement is of great significance for the reliability assessment of power insulated-gate bipolar transistor (IGBT) devices. The V CE (T) method is the most widely used junction temperature measurement method and is recommended by various test standards, the first step of which is the K factor calibration (i.e., calibration). As a new type of package structure, press-pack IGBT (PPI) has the characteristics of double-sided cooling, and the traditional calibration method has the problem of applicability and accuracy. Based on the structure of the PPIs, a double-sided heating calibration method is proposed in this article, requiring the same heating power on both sides. The transient thermal finite-element model is established to study the temperature distribution inside the device under double-sided heating and its variation with time. Finally, the effectiveness and accuracy of the method are verified by the designed experiment. The results show that under double-sided heating, the temperature inside the device is very uniform, and the junction temperature of the chip is the same as the case temperature in real time. Therefore, the junction temperature can be equivalent by measuring the case temperature, which meets the requirements of the calibration experiment.

中文翻译：

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压装 IGBT 结温测量的校准方法


准确的结温测量对于功率绝缘栅双极晶体管（IGBT）器件的可靠性评估具有重要意义。 V CE(T)方法是应用最广泛的结温测量方法，并被各种测试标准推荐，其第一步是K因子校准（即校准）。压装式IGBT（PPI）作为一种新型封装结构，具有双面冷却的特点，传统的校准方法存在适用性和准确性问题。基于PPI的结构，本文提出了一种双面加热校准方法，要求两侧具有相同的加热功率。建立瞬态热有限元模型，研究双面加热下器件内部的温度分布及其随时间的变化。最后通过设计的实验验证了该方法的有效性和准确性。结果表明，双面加热下，器件内部温度非常均匀，芯片的结温与外壳温度实时保持一致。因此，可以通过测量外壳温度来等效结温，满足校准实验的要求。