A novel and compact millimeter-wave (mm-Wave) spatial power combiner is developed integrating a silicon-based integrated circuit (IC) in a metal waveguide (WG). As an initial step toward integrating a silicon-based active IC in a WG, a passive back-to-back (B2B) transition incorporating a four-way spatial power splitter and combiner is realized at $E$ -band (71–86 GHz). In contrast to existing solutions, the proposed design considers power splitting and combining using a low-loss wireless transition between the IC and the WG. The proposed B2B structure comprises an IC implemented using the Institute for High Performance Microelectronics (IHP’s) 0.13- $\mu \text{m}$ SiGe BiCMOS technology integrated into the $H$ -plane of a WG. The IC is postprocessed and assembled in the WG prototype. The measured prototype shows a return loss better than 13 dB, an average insertion loss of 1.7 dB for a single transition, and a fractional bandwidth of 26.4% (69–90 GHz).

中文翻译：

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用于紧凑型高效毫米波空间功率合成器的基于硅的 IC 波导集成

开发了一种新型紧凑型毫米波 (mm-Wave) 空间功率合成器，将硅基集成电路 (IC) 集成到金属波导 (WG) 中。作为在 WG 中集成硅基有源 IC 的第一步，在以下位置实现了包含四路空间功率分配器和组合器的无源背对背 (B2B) 转换 $E$ - 频带 (71–86 GHz)。与现有解决方案相比，建议的设计考虑使用 IC 和 WG 之间的低损耗无线转换进行功率分配和组合。提议的 B2B 结构包括使用高性能微电子研究所 (IHP) 0.13- $\mu \text{m}$ SiGe BiCMOS 技术集成到 $H$ -WG 的平面。IC 在 WG 原型中进行后处理和组装。测得的原型显示回波损耗优于 13 dB，单次转换的平均插入损耗为 1.7 dB，部分带宽为 26.4% (69–90 GHz)。